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oH V SC AV ER OM AI SIO PL LA N IA BL S NT E
TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ VERY LOW VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
*R
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
Low Capacitance `4015 ................................................................................... 28 pF `4030 ................................................................................... 27 pF `4040 ................................................................................... 23 pF Digital Line Signal Level Protection - ISDN - xDSL Safety Extra Low Voltage, SELV, values
SMA Package (Top View)
R (B) 1
2 T (A)
MDXXCCE
Device `4015 `4030 `4040
VDRM V 8 15 25
V(BO) V 15 30 40
SMB Package (Top View)
R(B) 1
2 T(A)
30 A "L" Series specified for: - ITU-T recommendations K.20, K.45, K.21 - FCC Part 68 and GR-1089-CORE
MDXXBGF
Device Symbol
T
Wave Shape 2/10 s 8/20 s 10/160 s 10/700 s 10/560 s 10/1000 s
Standard GR-1089-CORE IEC 61000-4-5 FCC Part 68 ITU-T K.20/45/21 FCC Part 68 FCC Part 68 GR-1089-CORE
ITSP A 150 120 65
SD4XAA
45 35 30
R
Terminals T and R correspond to the alternative line designators of A and B
Available in SMA and SMB Packages SMA Saves 25 % Placement Area Over SMB
............................................ UL Recognized Components
Description
These devices are designed to limit overvoltages on digital telecommunication lines. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of transformer windings and low voltage electronics. The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on-state condition. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The device switches off when the diverted current falls below the holding current value.
How To Order
For Standard For Lead Free Termination Finish Termination Finish Order As Order As TISP40xxL1AJR-S TISP40xxL1BJR-S
Device TISP40xxL1
Package
Carrier
SMA/DO-214AC J-Bend (AJ) Embossed Tape Reeled TISP40xxL1AJR (R) SMB/DO-214AA J-Bend (BJ) TISP40xxL1BJR
Insert xx value corresponding to protection voltages of 15 V, 30 V and 40 V.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex AUGUST 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)
Rating Repetitive peak off-state voltage Non-repetitive peak on-state pulse current (see Notes 1 and 2) 2/10 s (T elcordia GR-1089-CORE, 2/10 s voltage wave shape) 8/20 s (IEC 61000-4-5, comb ination wave generator, 1.2/50 voltage, 8/20 current) 10/160 s (FCC Part 68, 10/160 s voltage wave shape) 5/310 s (ITU-T K.20/45/21, 10/700 s voltage wave shape) 5/320 s (FCC Part 68, 9/720 s voltage wave shape) 10/560 s (FCC Part 68, 10/560 s voltage wave shape) 10/1000 s (T elcordia GR-1089-CORE, 10/1000 s voltage wave shape) Non-repetitive peak on-state current (see Notes 1 and 2) 20 ms (50 Hz) full sine wave 16.7 ms (60 Hz) full sine wave 0.2 s 50 Hz/60 Hz a.c. 2 s 50 Hz/60 Hz a.c. 1000 s 50 Hz/60 Hz a.c. Initial rate of rise of current (2/10 waveshape) Maximum junction temperature Storage temperature range NOTES: 1. Initially, the device must be in thermal equilibrium with TJ = 25 C. 2. The surge may be repeated after the device returns to its initial conditions. 20 22 13 5 1.8 130 150 -65 to +150 150 120 65 45 45 35 30 `4015 `4030 `4040 Symbol VDRM Value 8 15 25 Unit V
ITSP
A
ITSM
A
di/d t TJM Tstg
A/s C C
Electrical Characteristics, TA = 25 C (Unless Otherwise Noted)
Parameter IDRM Repetitive peak offstate current Breakover voltage VD = VDRM `4015 `4030 `4040 `4015 `4030 `4040 Test Conditions Min Typ Max 5 15 30 40 34 50 63 0.8 `4015 `4030 `4040 50 2 Unit A
V(BO)
di/dt = 0.8 A/ms dv/dt = 1000 V/s, Linear voltage ramp, Maximum ramp value = 500 V di/dt = 5 A/s, Linear current ramp, Maximum ramp value = 10 A di/dt = 0.8 A/ms VD = 6 V VD = 13 V VD = 22 V IT = 5 A, di/dt = +/-30 mA/ms
V
V(BO)
Impulse breakover voltage Breakover current Off-state current Holding current
V
I(BO) ID IH
A A mA
AUGUST 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
Electrical Characteristics, TA = 25 C (Unless Otherwise Noted) (Continued)
Parameter Test Conditions f = 1 MHz, Vd = 1 V rms, VD = 0 `4015 `4030 `4040 `4015 `4030 `4040 `4015 `4030 `4040 Min Typ 28 27 23 25 24 20 23 22 18 Max 36 35 29 33 31 26 30 29 24 Unit
f = 1 MHz, Vd = 1 V rms, VD = 1 V Coff Off-state capacitance f = 1 MHz, Vd = 1 V rms, VD = 2 V
pF
Thermal Characteristics
Parameter Test Conditions EIA/JESD51-3 PCB, IT = ITSM(1000) , TA = 25 C, (see Note 3) SMA SMB 60 55 Min Typ Max 125 120 Unit
RJA
Junctio n to free air thermal resistance
265 mm x 210 mm populated line card, SMA 4-layer PCB, IT = ITSM(1000), TA = 25 C SMB
C/W
NOTE 3: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
AUGUST 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
Parameter Measurement Information
+i ITSP Quadrant I Switching Characteristic
ITSM
V(BO)
IH IDRM -v V DRM IDRM IH VD ID ID VD V DRM +v I(BO)
I(BO)
V(BO)
ITSM I Quadrant III Switching Characteristic ITSP -i
PM4AC
Figure 1. Voltage-Current Characteristic for T and R Terminals All Measurements are Referenced to the R Terminal
AUGUST 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
Typical Characteristics
OFF-STATE CURRENT vs JUNCTION TEMPERATURE
10000
TC4LVC
1.10
NORMALIZED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC4LVE
'4040L1 1000 ID - Off-State Current - nA Normalized Breakover Voltage
1.05
'4030L1
100
10 '4030L1 '4040L1 1 '4015L1 0.1 0 50 100 TA - Ambient Temperature - C 150
'4015L1 1.00
0.95 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150
Figure 2.
ON-STATE CURRENT vs ON-STATE VOLTAGE
70 50 30 20 10 7 5 3 2 1 0.7 0.5 0.3 0.2 0.1 1 2 3 4 VT - On-State Voltage - V 5 6 Normalized Holding Current IT - On-State Current - A
TC4LVB
Figure 3. NORMALIZED HOLDING CURRENT vs JUNCTION TEMPERATURE TC4LVD
2.0
1.5
1.0 0.9 0.8 0.7 0.6 0.5 0.4 -25 0 25 50 75 100 TJ - Junction Temperature - C 125 150
Figure 4.
AUGUST 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
Figure 5.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
Typical Characteristics
CAPACITANCE vs OFF-STATE VOLTAGE
30
TC4L1AA
TJ = 25 C Vd = 1 V Coff - Capacitance - pF '4015 20
'4030 15
'4040
10 0.01 0.02 0.05 0.1 0.2
0.5
1
23 5
10 20 30
VD - Off-state Voltage - V
Figure 6.
AUGUST 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
Rating and Thermal Information
NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION
ITSM(t) - Non-Repetitive Peak On-State Current - A 30 20 15 10 9 8 7 6 5 4 3 2 1.5 0.01 0.1 1 10 100 1000
TI4MAI
VGEN = 600 Vrms, 50/60 Hz RGEN = 1.4*VGEN/ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 C
t - Current Duration - s
Figure 7.
VDRM DERATING FACTOR vs MINIMUM AMBIENT TEMPERATURE
1.00 '4015L1 0.99
TI4LVA
Derating Factor
0.98 '4030L1 '4040L1 0.97
0.96
0.95 -40 -35 -30 -25 -20 -15 -10 -5
0
5
10 15 20 25
TAMIN - Minimum Ambient Temperature - C
Figure 8.
AUGUST 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
APPLICATIONS INFORMATION
Transformer Protection
The inductance of a transformer winding reduces considerably when the magnetic core material saturates. Saturation occurs when the magnetizing current through the winding inductance exceeds a certain value. It should be noted that this is a different current to the transformed current component from primary to secondary. The standard inductance-current relationship is:
di E = - L ---dt
where: L = unsaturated inductance value in H di = current change in A dt = time period in s for current change di E = winding voltage in V
((
Rearranging this equation and working large changes to saturation gives the useful circuit relationship of:
E x t = L x i
A transformer winding volt-second value for saturation gives the designer an idea of circuit operation under overvoltage conditions. The volt-second value is not normally quoted, but most manufacturers should provide it on request. A 50 Vs winding will support rectangular voltage pulses of 50 V for 1 s, 25 V for 2 s, 1 V for 50 s and so on. Once the transformer saturates, primary to secondary coupling will be lost and the winding resistance, RW, shunts the overvoltage protector, Th1 - see Figure 9. This saturated condition is a concern for long duration impulses and a.c. fault conditions because the current capability of the winding wire may be exceeded. For example, if the on-state voltage of the protector is 1 V and the winding resistance is 0.2 , the winding would bypass a current of 1/0.2 = 5 A, even though the protector was in the low voltage condition.
T1 UNSATURATED Th1 L SATURATED Th1 RW
AI4XAO
T1
Figure 9. Transformer Saturation
Figure 10 shows a generic protection arrangement. Resistors R1 and R2, together with the overcurrent protection, prevent excessive winding current flow under a.c. conditions. Normally these resistors would only be needed for special cases, e.g. some T1/E1 designs. Alternatively, a split winding could be used with a single resistor connecting the windings. This resistor could be by-passed by a small capacitor to reduce signal attenuation. OVERAI4XAN CURRENT PROTECT ION R1 T1
LINE Th1 SIGNAL
R2
Figure 10. Transformer Winding Protection
Overcurrent protection upstream from the overvoltage protector can be fuse, PTC or thick film resistor based. For very high frequency circuits, fuse inductance due to spiral wound elements may need to be evaluated.
TISP(R) Device Voltage Selection
Normally, the working voltage value of the protector, VDRM, would be chosen to be just greater than the peak signal amplitude over the equipment temperature range. This would give the lowest possible protection voltage, V(BO). This would minimize the peak voltage applied to the transformer winding and increase the time to core saturation. In high frequency circuits, there are two further considerations. Low voltage protectors have a higher capacitance than high voltage protectors.
AUGUST 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
TISP(R) Device Voltage Selection (Continued)
So a higher voltage protector might be chosen specifically to reduce the protector capacitive effects on the signal. Low energy short duration spikes will be clipped by the protector. This will extend the spike duration and the data loss time. A higher protector voltage will reduce the data loss time. Generally, this will not be a significant factor for inter-conductor protection. However, clipping is significant for protection to ground, where there is continuous low-level a.c. common mode induction. In some cases the induced a.c. voltage can be over 10 V. Repetitive clipping at the induced a.c. peaks by the protector would cause severe data corruption. The expected a.c. voltage induced should be added to the maximum signal level for setting the protector VDRM value.
2-Wire Digital Systems
Typical systems using a single twisted pair connection are: Integrated Services Digital Network (ISDN) and Pair Gain. Signal level protection at the transformer winding is given by protectors Th3 and Th5. Typically these could be TISP4015L1 type devices with a 15 V voltage protection level.
LINE SIGNAL T1 Th1 Th3 C1 Th2 OVERCURRENT PROTECTION OVERCURRENT PROTECTION Th4 C2 Th5 T2 SIGNAL
TRANSFORMER COUPLED TWO-WIRE INTERFACE DC FEED DC SUPPLY
AI4XAL
Figure 11. 2-Wire System
Two line protection circuits are given; one referenced to ground using Th1 and Th2 (left) and the other inter-wire using protector Th4 (right) - see Figure 11. For ISDN circuits compliant to ETSI ETR 080:1993, ranges 1 and 2 can be protected by the following device types: TISP4095M3, TISP4095H3, TISP3095H3 (combines Th1 and Th2) and TISP7095H3 (combines Th1, Th2 and Th4). Ranges 4 through 5 can be protected by: TISP4145M3, TISP4145H3, TISP3145H3 (combines Th1 and Th2) and TISP7145H3 (combines Th1, Th2 and Th4). Device surge requirement, H or M, will be set by the overcurrent protection components and the standards complied with. Protection of just the d.c. feed to ETSI ranges is covered in the TISP5xxxH3 data sheet. When loop test voltages exceed the normal d.c. feed levels, higher voltage protectors need to be selected. For two terminal protectors, for levels up to 190 V (135 V rms) the TISP4250, H3 or M3, can be used and for 210 V (150 V rms) the TISP4290, H3 or M3, can be used. In Pair Gain systems, the protector VDRM is normally set by the d.c. feed value. The following series of devices have a 160 V working voltage at 25 C: TISP4220M3, TISP4220H3, TISP3210H3 (combines Th1 and Th2) and TISP7210H3 (combines Th1, Th2 and Th4). These devices can be used on 150 V d.c. feed voltages down to an ambient temperature of -25 C. Where the subscriber equipment may be exposed to POTS (Plain Old Telephone Service) voltage levels, protector Th4 needs a higher working voltage of about 275 V. Suitable device types are: TISP4350M3, TISP4350H3, TISP3350H3 (combines Th1 and Th2) and TISP7350H3 (combines Th1, Th2 and Th4). The overcurrent protection for the overvoltage protector can be fuse, PTC or thick film resistor based. Its a.c. limiting capability should be less than the ratings of the intended overvoltage protector. Equipment complying with the year 2000 international K.20, K.21 and K.45 recommendations from the ITU-T, may be required to demonstrate protection coordination with the intended primary protector. Without adding series resistance, a simple series fuse overcurrent protection is likely to fail the equipment for this part of the recommendation. If the d.c. feed consists of equal magnitude positive and negative voltage supplies, appropriately connected TISP5xxxH3 unidirectional protectors could replace Th1 and Th2.
4-Wire Digital Systems
A typical system using a two twisted pair connection is the High-bit-rate Digital Subscriber Line (HDSL) and the "S" interface of ISDN. Figure 12 shows a generic two line system. HDSL tends to have ground referenced protection at both ends of the lines (Th1, Th2, Th3 and Th4). The ISDN "S" interface is often inside the premises and simple inter-wire protection is used at the terminating adaptor (Th7 and Th8). In all cases, signal protection, Th5, Th6, Th9 and Th10, can be TISP4015L1 type devices with a 15 V voltage protection level.
AUGUST 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
4-Wire Digital Systems (Continued)
LINE 1 SIGNAL T1 Th1 Th5 Th2 OVERCURRENT PROTECTION OVERCURRENT PROTECTION Th7 Th 9 T3 SIGNAL
DC FEED LINE 2 SIGNAL T2 Th 3 Th 6 Th4 OVERCURRENT PROTECTION OVERCURRENT PROTECTION Th8
DC SUPPLY T4 SIGNAL
Th10
TRANSFORMER COUPLED FOUR-WIRE INTERFACE
AI4XAM
Figure 12. 4-Wire System
For an HDSL d.c. feed voltage of 180 V or less and operation down to an ambient of -25 C, the following Th1, Th2, Th3 and Th4 protectors are suitable: TISP4250M3 or TISP4250H3, TISP3250H3 (combines Th1 and Th2 or Th3 and Th4) and TISP7250H3 (combines Th1, Th2 and Th7 or Th3, Th4 and Th8). Possible overcurrent protection components are covered in the 2-wire digital systems clause. For ISDN interfaces powered with 40 V (ETSI, ETS 300 012 1992) the following Th1, Th2, Th3 and Th4 protectors are suitable: TISP4070M3 or TISP4070H3 or TISP4070L3, TISP3070F3 or TISP3070H3 (combines Th1 and Th2 or Th3 and Th4) and TISP7070F3 or TISP7070H3 (combines Th1, Th2 and Th7 or Th3, Th4 and Th8). At the terminating adaptor, the Th7 and Th8 protectors do not "see" the d.c. feed voltage and should be selected to not clip the maximum signal level. Generally, the TISP40xxL1 series will be suitable. Internal ISDN lines are not exposed to high stress levels and the chances of a.c. power intrusion are low (ETSI EN 300 386-2 1997). Accordingly, the equipment port protection needs are at a lower level than ports connected to outside lines.
Home Phone Networking
Using the existing house telephone wiring, home phone networking systems place the local network traffic in a high band above the POTS and ADSL (Asymmetrical Digital Subscriber Line) spectrum. Local network rates are 1 Mbps or more. To reject noise and harmonics, an in-line protection and 5 MHz to 10 MHz bandpass filter module is used for the equipment. These modules are available from magnetic component manufacturers (e.g. Bel Fuse Inc.) A typical circuit for the telephone line magnetics module is shown in Figure 13. Transformer T1 isolates the equipment from the house wiring. The isolated winding output is voltage limited by a very low-voltage protector, Th1. With a differential voltage of about 12 V peak to peak, the TISP4015L1 could be used for Th1. After filtering, connection is made to the differential transceiver of the processing IC. TIP T1 FILTER
HRTRX+
Th1 C1
HRTRXAI4XAP
PROTECTION
RING
Figure 13. Home Phone Networking Isolation/filter/protection Circuit
AUGUST 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
MECHANICAL DATA
Recommended Printed Wiring Land Pattern Dimensions
SMA Land Pattern 2.34 (. 092)
1.90 (.075)
2.16 (.085)
MILLIMETERS DIMENSIONS ARE: (INCHES)
MDXX BIC
SMB Land Pattern
2.54 (.100)
2.40 (.095)
DIMENSIONS ARE:
MILLIMETERS (INCHES)
2.16 (.085)
MDXX BIB
Device Symbolization Code
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
Device TISP4015L1AJ TISP4030L1AJ TISP4040L1AJ
Symbolization Code 4015L 4030L 4040L
Device TISP4015L1BJ TISP4030L1BJ TISP4040L1BJ
Symbolization Code 4015L1 4030L1 4040L1
Carrier Information
For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape.
Package SMA SMB
Carrier Embossed Tape Reel Pack
Standard Quantity 5000 3000
AUGUST 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
MECHANICAL DATA
SMA (DO-214AC) Plastic Surface Mount Diode Package
This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
SMA
4.06 - 4.57 (.160 - .180)
2.29 - 2.92 (.090 - .115)
2
Index Mark (if needed)
2.00 - 2.40 (.079 - .095)
0.76 - 1.52 (.030 - .060)
1.58 - 2.16 (.062 - .085) 4.83 - 5.59 (.190 - .220)
0.10 - 0.20 (.004 - .008)
1.27 - 1.63 (.050 - .064)
DIMENSIONS ARE:
MILLIMETERS (INCHES)
MDXXCAA
AUGUST 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
MECHANICAL DATA
Tape Dimensions
SMA Package Single-Sprocket Tape
3.90 - 4.10 (.154 - .161) 1.95 - 2.05 (.077 - .081)
1.55 - 1.65 (.061 - .065) 1.65 - 1.85 (.065 - .073) 0.40 MAX. (.016)
5.45 - 5.55 (.215 - .219) 11.70 - 12.30 (.461 - .484)
8.20 MAX. (.323)
3.90 - 4.10 (.154 - .161)
Direction of Feed
1.5 MIN. (.059)
Carrier Tape Embossment 20
0 MIN.
Cover Tape
4.50 MAX. (.177)
Maximum component rotation
Index Mark (If needed)
Typical component cavity center line Typical component center line
DIMENSIONS ARE:
MILLIMETERS (INCHES)
NOTES: A. The clearance between the component and the cavity must be within 0.05 mm (.002 in) MIN. to 0.65 mm (.026 in) MAX. so that the component cannot rotate more than 20 within the determined cavity. B. Taped devices are supplied on a reel of the following dimensions: Reel diameter: 330 mm 3.0 mm (12.99 in .12 in) Reel hub diameter: 75 mm (2.95 in) MIN. Reel axial hole: 13.0 mm 0.5 mm (.51 in .02 in) C. 5000 devices per reel.
MDXXCGA
AUGUST 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
MECHANICAL DATA
SMB (DO-214AA) Plastic Surface Mount Diode Package
This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
SMB 4.06 - 4.57 (.160 - .180)
3. 30 - 3. 94 (.130 - .155)
1
2
Index Mark (if needed)
2. 00 - 2.40 (.079 - .094)
0. 76 - 1.52 (.030 - .060) 5. 21 - 5.59 (.205 - .220)
MILLIMETERS (INCHES)
1. 90 - 2.10 (.075 - .083)
0. 10 - 0. 20 (.004 - .008)
1. 96 - 2. 32 (.077 - .091)
DIMENSIONS ARE:
MDXXBHAB
AUGUST 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
MECHANICAL DATA
Tape Dimensions
SMB Package Single-Sprocket Tape
3. 90 - 4.10 (.154 - .161 ) 1. 95 - 2.05 (.077 - .081)
1. 55 - 1.65 (.061 - .065 ) 1. 65 - 1.85 (.065 - .073 ) 0. 40 MAX . (.016)
5. 45 - 5.55 (.215 - .219 ) 11.70 - 12.30 (.461 - .484 )
8. 20 MAX . (.323)
7. 90 - 8.10 (.311 - .319 ) Direction of Feed
1. 5 MIN . (.059) Carrier Tape Embossment 20
0 MIN .
Cover Tape 4. 5 MAX . (.177)
Maximium component rotation
Index Mark (if needed)
Typical component cavity center line Typical component center line
NOTES: A. The clearance between the component and the cavity must be within 0.05 mm (.002 in) MIN. to 0.65 mm (.026 in) MAX. so that the component cannot rotate more than 20 within the determined cavity. B. Taped devices are supplied on a reel of the following dimensions: Reel diameter: 330 mm 3.0 mm (12.99 in .118 in) Reel hub diameter: 75 mm (2.95 in) MIN. Reel axial hole: 13.0 mm 0.5 mm (.512 in .020 in) C. 3000 devices are on a reel.
MDXXBJA
"TISP" is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. "Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries.
AUGUST 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.

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